Au/GaN interface: Initial stages of formation and temperature-induced effects
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.085308/fulltext
Reference26 articles.
1. III–nitrides: Growth, characterization, and properties
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4. XPS study of Au/GaN and Pt/GaN contacts
5. Enhanced electrical performance of Au/n-GaN Schottky diodes by novel processing
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