Gain characteristics of ideal dilute nitride quantum well lasers
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Proceedings of 25th ICPS;Lindsay,2001
3. Auger recombination in long-wavelength infrared InNxSb1−x alloys
4. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m
5. Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature
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