Band structure and the optical gain of GaInNAs/GaAs quantum wells modeled within 10-band and 8-band kp model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4790568
Reference58 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Band Anticrossing in GaInNAs Alloys
3. Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inGaAs1−xNxwithx<0.03
4. Formation of an impurity band and its quantum confinement in heavily doped GaAs:N
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