Numerical study of valence band states evolution in AlxGa1-xAs [111] QDs systems

Abstract

Quantum dots (QDs) are very attractive nanostructures from an application point of view due to their unique optical properties. Optical properties and valence band (VB) state character was numerically investigated with respect to the effects of nanostructure geometry and composition. Numerical simulation was carried out using the Luttinger–Kohn model adapted to the particular case of QDs in inverted pyramids. We present the source code of the 4-band Luttinger–Kohn model that can be used to model AlGaAs or InGaAs nanostructures. The work focuses on the optical properties of GaAs/AlGaAs [111] QDs and quantum dot molecules (QDMs). We examine the dependence of Ground State (GS) optical properties on the structural parameters and predict optimal parameters of the QD/QDM systems to achieve dynamic control of GS polarization by an applied electric field.