Auger recombination in long-wavelength infrared InNxSb1−x alloys-Reference-Cited by-同舟云学术

Auger recombination in long-wavelength infrared InNxSb1−x alloys

Published:2001-03-12 Issue:11 Volume:78 Page:1568-1570
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Murdin B. N.,Kamal-Saadi M.,Lindsay A.,O’Reilly E. P.,Adams A. R.,Nott G. J.,Crowder J. G.,Pidgeon C. R.,Bradley I. V.,Wells J.-P. R.,Burke T.,Johnson A. D.,Ashley T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1355301

Reference13 articles.

1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

2. MOCVD growth of InAsN for infrared applications

3. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements

4. Effect of nitrogen on the electronic band structure of group III-N-V alloys

5. Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x

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