Modeling of SiGe deposition using quantum chemistry techniques for detailed kinetic analysis-Reference-Cited by-同舟云学术

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Modeling of SiGe deposition using quantum chemistry techniques for detailed kinetic analysis

Published:2000-03 Issue:1-2 Volume:3 Page:31-39
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hierlemann M.,Werner C.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference42 articles.

1. Mallard WG, Westley F, Heron JT, Hampson RF. NIST Chemical Kinetics Database Version 6.0, NIST Standard Reference Data, Gaithersburg, 1994

2. Ab initio molecular orbital theory;Hehre,1986

3. Rate constants for the reactions of hydrogen atoms with some silanes and germanes

4. Kinetics and mechanism of the germane decomposition

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1. Chemistry and kinetics governing hydride/chloride chemical vapor deposition of epitaxial Ge1−xSnx;Journal of Vacuum Science & Technology A;2019-03

2. A Numerical Method for Ge-Profile of Microwave Power Device Based on Si/Si_1-x/Si;Advanced Materials Research;2014-07

3. Fabrication of high quality strained SiGe on Si substrate by RPCVD;Chinese Science Bulletin;2012-03-23

4. Control of homoepitaxial Si nanostructures by locally modified surface reactivity;Applied Physics Letters;2008-02-04

5. UHV/CVD Growth Techniques;SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices;2007-12-13

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