Affiliation:
1. Hunan Engineering and Technology College
Abstract
A double-mesa hetero-junction bipolar structure of NPN type microwave power device is used. The Si is chosen for emitter and collector, and Si1-xGexalloy is for base. Based on some experiment data, a numerical method is used to get an equation about forbidden band Egvia the variety composition of Ge at 300K using MATLAB, which is more precise than linearization. We also calculate the collector current density JCvia the variety of VBEand the obtained equation is consistent with the experiment result. An optimum Ge composition value was found. It has practical significance for the device design and simulation.
Publisher
Trans Tech Publications, Ltd.
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