Low-temperature photoluminescence characterization of hydrogen- and helium-implanted silicon-Reference-Cited by-同舟云学术

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Low-temperature photoluminescence characterization of hydrogen- and helium-implanted silicon

Published:2001-02 Issue:1-3 Volume:4 Page:297-299
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Ulyashin A.G.,Job R.,Fahrner W.R.,Mudryi A.V.,Patuk A.I.,Shakin I.A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Hydrogen in crystalline semoconductors;Pearton,1991

2. Radiative recombination channels due to hydrogen in crystalline silicon

3. Photoluminescence studies of the neutralization of acceptors in silicon by atomic hydrogen

4. Hydrogen redistribution and enhanced thermal donor formation at post implantation annealing of p-type hydrogen implanted Czochralski silicon

5. Hydrogen passivation of multicrystalline silicon solar cells

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2. Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound;Inorganic Materials;2009-11

3. Open-circuit voltage decay transient in dislocation-engineered Si p–n junction;Journal of Physics D: Applied Physics;2008-07-30

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5. Influence of temperature–pressure treatment on heavily hydrogenated silicon surface;Applied Surface Science;2006-07

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