Open-circuit voltage decay transient in dislocation-engineered Si p–n junction
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/41/i=16/a=165107/pdf
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1. Will silicon be the photonic material of the third millenium? *
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