Radiative recombination channels due to hydrogen in crystalline silicon-Reference-Cited by-同舟云学术

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Radiative recombination channels due to hydrogen in crystalline silicon

Published:1989-10 Issue:1-4 Volume:4 Page:41-45
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Canham L.T.,Dyball M.R.,Leong W.Y.,Houlton M.R.,Cullis A.G.,Smith P.W.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Hydrogen in crystalline semiconductors

2. Damage to shallown+/pandp+/njunctions by CHF3+CO2reactive ion etching

3. Photoluminescence of Defects Produced by Reactive Ion Etching of Silicon

4. Defects in single-crystal silicon induced by hydrogenation

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