A parametric study of AlN thin films grown by pulsed laser deposition
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. P.J. Gielisse, H. Niculescu, in: M.A. Prelas, P. Gielisse, G. Popovici, B.V. Spitsyn, T. Stacy (Eds.), Wide Band Gap Electronic Material, Kluwer Academic, Netherlands, 1995, p. 401.
2. Laser‐induced chemical vapor deposition of AlN films
3. High quality aluminum nitride epitaxial layers grown on sapphire substrates
4. Properties of AlN films grown at 350 K by gas‐phase excimer laser photolysis
5. Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films
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