Properties of AlN films grown at 350 K by gas‐phase excimer laser photolysis
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360606
Reference39 articles.
1. Epitaxially grown AlN and its optical band gap
2. Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region
3. The intrinsic thermal conductivity of AIN
4. AlN capped annealing of Si implanted semi‐insulating GaAs
5. Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel
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