Raman scattering, photoluminescence, and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates-Reference-Cited by-同舟云学术

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Raman scattering, photoluminescence, and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates

Published:2002-05 Issue:1-3 Volume:93 Page:15-18
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Benyoucef M,Kuball M,Koleske D.D,Wickenden A.E,Henry R.L,Fatemi M,Twigg M.E

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Influence of substrate misorientation on the structural characteristics of InGaAs/GaAs MQW on (111)B GaAs grown by MBE

2. Influences of crystallographic misorientation of GaAs substrateson misfit stresses and microhardness of InGaP epilayers

3. Structural properties of ZnSe layers grown on (001) GaAs substrates tilted toward [110] and [010]

4. Enhancement of electrical and structural properties of GaN layers grown on vicinal-cut, a-plane sapphire substrates

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy;ECS Transactions;2013-03-15

2. Influence of GaN substrate off-cut on properties of InGaN and AlGaN layers;Crystal Research and Technology;2011-11-24

3. Growth of GaN-HEMT structures using super lattice quasi-AlGaN alloy barriers on vicinal SiC substrates by rf-MBE;Journal of Crystal Growth;2007-04

4. Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates;Materials Science Forum;2006-10

5. Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN;MRS Proceedings;2005

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