Growth of GaN-HEMT structures using super lattice quasi-AlGaN alloy barriers on vicinal SiC substrates by rf-MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. G. Piao, M. Shimizu, H. Okumura, in: Compound Semiconductors 2004, Proceeding of the 31st International Symposium, vol. 184, 2004, p. 243.
2. Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers
3. MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates
4. Characterization of different-Al-content Al[sub x]Ga[sub 1−x]N/GaN heterostructures and high-electron-mobility transistors on sapphire
5. Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures
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1. Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC;Advanced Materials;2022-05-04
2. Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer;Superlattices and Microstructures;2009-02
3. Surface roughness contribution to MHEMT mobility characteristics;2008 IEEE International Conference on Semiconductor Electronics;2008-11
4. Optical radiation selective photodetectors based on III nitrides;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-07
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