Si overgrowth of self-assembled Ge clusters on Si(001) — a scanning tunnelling microscopy study
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. Growth and equilibrium structures in the epitaxy of Si on Si(001)
2. STM study on silicon(001) grown by magnetron sputter epitaxy
3. Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1−xGex morphologies: a RHEED and TEM study
4. Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si1−xGex hut islands
5. Embedding of Nanoscale 3D SiGe Islands in a Si Matrix
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal transport through short-period SiGe nanodot superlattices;Journal of Applied Physics;2014-01-28
2. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping;Applied Physics Letters;2006-12-18
3. Real Time Observation ofGeSi/Si(001)Island Shrinkage due to Surface Alloying during Si Capping;Physical Review Letters;2006-12-01
4. Mechanism ofGaNquantum dots capped withAlN: An AFM, electron microscopy, and x-ray anomalous diffraction study;Physical Review B;2006-11-02
5. Strain-Mediated Uniform Islands in Stacked Ge/Si(001) Layers;Japanese Journal of Applied Physics;2004-11-10
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