Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2405876
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1. Si-capping-induced surface roughening on the strip structures of Ge selectively grown on an Si substrate;Journal of Vacuum Science & Technology B;2021-07
2. Assessing Carrier Recombination Processes in Type‐II SiGe/Si(001) Quantum Dots;Annalen der Physik;2019-01-11
3. Photoluminescence enhancement through vertical stacking of defect-engineered Ge on Si quantum dots;Semiconductor Science and Technology;2017-01-16
4. Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates;Nanotechnology;2015-05-13
5. Evolution of InAs/GaAs QDs Size with the Growth Rate: A Numerical Investigation;Journal of Nanomaterials;2015
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