Stabilization of the 3C-SiC/SOI system by an intermediate silicon nitride layer-Reference-Cited by-同舟云学术

Stabilization of the 3C-SiC/SOI system by an intermediate silicon nitride layer

Published:1999-07 Issue: Volume:61-62 Page:522-525
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Zappe S,Obermeier E,Stoemenos J,Möller H,Krötz G,Wirth H,Skorupa W

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. J. von Berg, R. Ziermann, W. Reichert, E. Obermeier, E. Eickhoff, G. Kroetz, U. Thoma, T.H. Boltshauser, C. Cavalloni, in: Proceedings of the International Conference on SiC, III-Nitrides and Related Materials, Stockholm, August 31–September 5, 1997, Mat. Sci. Forum 264–268 (1998) 1101.

2. J. Camassel, in: Proceedings of the International Conference on Silicon Hetero-structures, J. Vacuum Science and Technology B, Conference Paper #J13, in press.

3. V. Papaioannou, E. Pavlidou, J. Stoemenos W. Reichert, E. Obermeier, in: Proceedings of the International Conference on SiC, III-Nitrides and Related Materials, Stockholm August 31–September 5, 1997, Mat. Sci. Forum 264–268 (1998) 1101.

4. Structural characterization of nanometer SiC films grown on Si

5. Carbonization‐induced SiC micropipe formation in crystalline Si

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