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Luminescence and lasing in GaN epitaxial layers and InGaN/GaN quantum well heterostructures under optical and electron-beam excitation

  • Published:2001-03 Issue:1-3 Volume:80 Page:322-326
  • ISSN:0921-5107
  • Container-title:Materials Science and Engineering: B
  • language:en
  • Short-container-title:Materials Science and Engineering: B

Author:

Yablonskii G.P.,Lutsenko E.V.,Pavlovskii V.N.,Marko I.P.,Schineller B.,Heuken M.,Heime K.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference7 articles.

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrafast carrier relaxation in group-III nitride multiple quantum wells;Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII;2004-06-16

2. GaN on Si substrates for LED and LD applications;physica status solidi (c);2004-01-19

3. Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells;Applied Physics Letters;2003-03-03

4. GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates;Applied Physics Letters;2002-10-21
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