MOVPE growth of high quality III-nitride material for light emitting device applications in a multiwafer system-Reference-Cited by-同舟云学术

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MOVPE growth of high quality III-nitride material for light emitting device applications in a multiwafer system

Published:1998-06 Issue: Volume:189-190 Page:344-348
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Eichel-Streiber Caspar von,Schön Oliver,Beccard Rainer,Schmitz Dietmar,Heuken Michael,Jürgensen Holger

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference2 articles.

1. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

2. E. Woelk, G. Strauch, D. Schmitz, H. Jürgensen, Proc. Int. Symp. on Blue Laser and Light Emitting Diodes, Chiba Univ., Japan, 1996, p. 514.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time- and Temperature-Resolved Photoluminescence of GaN:Mg Epitaxial Layers Grown by MOVPE;physica status solidi (b);2001-11

2. Luminescence and lasing in GaN epitaxial layers and InGaN/GaN quantum well heterostructures under optical and electron-beam excitation;Materials Science and Engineering: B;2001-03

3. Performance of multiwafer reactor GaN MOCVD system;Journal of Crystal Growth;2000-12

4. Stimulated Emission and Excitonic Bleaching in GaN Epilayers under High-Density Excitation;physica status solidi (b);1999-11

5. Investigation of GaInN films and development of double-hetero (DH) structures for blue and green light emitters;Journal of Crystal Growth;1999-06

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