Investigation of GaInN films and development of double-hetero (DH) structures for blue and green light emitters
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Efficient and uniform production of III-nitride films by multiwafer MOVPE
2. MOVPE growth of high quality III-nitride material for light emitting device applications in a multiwafer system
3. High quality III-nitride material grown in mass production MOCVD systems
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer;Journal of Crystal Growth;2009-05
2. Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor;physica status solidi (c);2006-06
3. Advances in the modeling of MOVPE processes;Journal of Crystal Growth;2003-02
4. Integrated polynomic growth parameter model for GaN/GaInN MQW structures for 6x2" and 11x2" mass production MOCVD reactors;SPIE Proceedings;2002-06-06
5. Growth and Optical Properties of Double Heterostructure GaN/InGaN/GaN Films with Large Composition;Chinese Physics Letters;2002-04-18
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