Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference12 articles.
1. Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition
2. An Elucidation of Solid Incorporation of InGaN Grown by Metalorganic Vapor Phase Epitaxy
3. Study of indium droplets formation on the InxGa1−xN films by single crystal x-ray diffraction
4. Phase Separation in InGaN Epitaxial Layers
5. Effect of hydrogen on the indium incorporation in InGaN epitaxial films
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1. Progress in Modeling of III-Nitride MOVPE;Progress in Crystal Growth and Characterization of Materials;2020-08
2. Impact of metalorganic vapor phase epitaxy growth conditions on compressive strain relaxation in polar III-nitride heterostructures;Japanese Journal of Applied Physics;2019-05-08
3. Transport phenomena and the effects of reactor geometry for epitaxial GaN growth in a vertical MOCVD reactor;Journal of Crystal Growth;2015-12
4. Polarization engineering of c -plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers;physica status solidi (b);2015-11-30
5. Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications;Coordination Chemistry Reviews;2013-07
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