Dynamical study of the yellow luminescence band in GaN-Reference-Cited by-同舟云学术

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Dynamical study of the yellow luminescence band in GaN

Published:1997-02 Issue:2 Volume:41 Page:275-278
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hoffmann A.,Eckey L.,Maxim P.,Holst J.-Chr.,Heitz R.,Hofmann D.M.,Kovalev D.,Stevde G.,Volm D.,Meyer B.K.,Detchprohm T.,Hiramatsu K.,Amano H.,Akasaki I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes

2. Observation of optically detected magnetic resonance in GaN films

3. Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition

4. Mechanism of Yellow Luminescence in GaN

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The GaN(0001) yellow-luminescence-related surface state and its interaction with air;Surfaces and Interfaces;2023-06

2. Estimation of point defects content in bulk GaN;Journal of Luminescence;2022-05

3. Current Status of Carbon‐Related Defect Luminescence in GaN;physica status solidi (a);2021-08-24

4. Physical properties of Ga-Fe-N system relevant for crystallization of GaN – Initial studies;Journal of Crystal Growth;2019-02

5. A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures;Journal of Applied Physics;2017-07-21

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