Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devices-Reference-Cited by-同舟云学术

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Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devices

Published:2001-03 Issue:1-3 Volume:80 Page:77-80
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Aperathitis E.,Cengher D.,Kayambaki M.,Androulidaki M.,Deligeorgis G.,Tsagaraki K.,Hatzopoulos Z.,Georgakilas A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. One‐step two‐level etching technique for monolithic integrated optics

2. Nonselective etching of GaAs/AlGaAs double heterostructure laser facets by Cl2reactive ion etching in a load‐locked system

3. Short cavity GaAs/AlGaAs multiquantum well lasers by dry etching

4. GaAs/AlGaAs photonic integrated circuits fabricated using chemically assisted ion beam etching

5. Characteristics of a two‐component chemically‐assisted ion‐beam etching technique for dry‐etching of high‐speed multiple quantum well laser mirrors

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A first-principles study of transport properties of a gallium arsenide nanoribbon-based molecular device;Materials Science in Semiconductor Processing;2015-07

2. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl2 ion beam assisted etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-03

3. Defect-free etching process for GaAs/AlGaAs hetero-nanostructure using chlorine/argon mixed neutral beam;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-11

4. Dry etching process of GaAs in capacitively coupled BCl3-based plasmas;Thin Solid Films;2010-09

5. Nonselective vertical etching of GaAs and AlGaAs/GaAs in high pressure capacitively coupled BCl3/N2 plasmas;Current Applied Physics;2010-03

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