Nonselective vertical etching of GaAs and AlGaAs/GaAs in high pressure capacitively coupled BCl3/N2 plasmas
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference15 articles.
1. Precise control of dry etching for nanometer scale air-hole arrays in two-dimensional GaAs/AlGaAs photonic crystal slabs
2. Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devices
3. Novel fabrication of self-aligned and microwave power heterojunction bipolar transistors
4. Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using Cl[sub 2]/BCl[sub 3]/Ar plasmas
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1. GaAs manufacturing processes conditions for micro- and nanoscale devices;Journal of Manufacturing Processes;2020-12
2. Dry etching of deep air holes in GaAs/AlGaAs-based epi-wafer having InAs quantum dots for fabrication of photonic crystal laser;Japanese Journal of Applied Physics;2017-11-06
3. Selective etching of GaAs over Al0.2Ga0.8As semiconductor in pulsed DC BCl3/SF6 plasmas;Thin Solid Films;2012-10
4. Dry etching of GaAs in asymmetric bipolar pulsed dc BCl3 plasmas;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05
5. Defect-free etching process for GaAs/AlGaAs hetero-nanostructure using chlorine/argon mixed neutral beam;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-11
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