Characteristics of a two‐component chemically‐assisted ion‐beam etching technique for dry‐etching of high‐speed multiple quantum well laser mirrors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.114697
Reference14 articles.
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication of hyperboloid-drum structure for electrically pumped laser of sub-micrometer to nanometer diameter active areas;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
2. Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devices;Materials Science and Engineering: B;2001-03
3. Fabrication of photonic quantum ring laser using chemically assisted ion beam etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
4. Optimization of GaAs ECR etching in chemically assisted ion beam process using Cl2/Ar plasma;Materials Science in Semiconductor Processing;2000-06
5. Plasma Processing of III-V Materials;Handbook of Advanced Plasma Processing Techniques;2000
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