Hydrogen introduction into p+ silicon by boiling in water and its application to deep-level transient spectroscopy measurements
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Mechanisms of transition-metal gettering in silicon
3. Iron solubility in highly boron-doped silicon
4. Experiments and computer simulations of iron profiles in p/p+ silicon: segregation and the position of the iron donor level
5. Temperature dependence of the iron donor level in silicon at device processing temperatures
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