Oxidation of clean and H-terminated SiC surfaces
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Rb/β-SiC(100) surface and catalytic oxidation of the substrate
2. The surface oxidation of alpha-silicon carbide by O2 from 300 to 1373 K
3. Photoemission study of oxygen adsorption on (001) silicon carbide surfaces
4. Adsorption and co-adsorption of boron and oxygen on ordered α-SiC surfaces
5. Surface structure and composition of β- and 6H-SiC
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2. Surface defects in 4H-SiC: properties, characterizations and passivation schemes;Semiconductor Science and Technology;2023-06-08
3. Structure determination of hydrogen-terminated 4H -SiC(0001) by LEED;Physical Review B;2019-06-28
4. Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-09
5. Deuterium adsorption on (and desorption from) SiC(0 0 0 1)-(3 × 3), $(\sqrt{\sf 3} \times \sqrt {\sf 3})$R30°, $({\sf 6}\sqrt {\sf 3} \times {\sf 6}\sqrt{\sf 3})$R30° and quasi-free-standing graphene obtained by hydrogen intercalation;Journal of Physics D: Applied Physics;2014-02-12
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