Photoemission study of oxygen adsorption on (001) silicon carbide surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343589
Reference38 articles.
1. Interface characteristics of thermal Si02 on SiC
2. Auger Electron Spectroscopy Analysis of Thermal Oxide Layers of Silicon Carbide
3. Thermal oxidation of 3C silicon carbide single‐crystal layers on silicon
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