Structure determination of hydrogen-terminated 4H -SiC(0001) by LEED
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.99.235434/fulltext
Reference36 articles.
1. Electronic Confinement and Coherence in Patterned Epitaxial Graphene
2. Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface
3. Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material
4. Passivation of hexagonal SiC surfaces by hydrogen termination
5. Correlation effects at idealSiC{0001}−(1×1)surfaces
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Selective Fabrication of Bismuthene and α-Bi on Hydrogen-Terminated SiC(0001);Langmuir;2022-10-28
2. Core and Surface Electronic States and Phonon Modes in SiC Quantum Dots Studied by Optical Spectroscopy and Hybrid TDDFT;The Journal of Physical Chemistry C;2021-03-23
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