Selective Fabrication of Bismuthene and α-Bi on Hydrogen-Terminated SiC(0001)-Reference-Cited by-同舟云学术

Selective Fabrication of Bismuthene and α-Bi on Hydrogen-Terminated SiC(0001)

Author:

Yaegashi Ken¹,Sugawara Katsuaki¹²³^ORCID,Kato Takemi¹^ORCID,Takahashi Takashi¹,Sato Takafumi¹²⁴⁵^ORCID

Affiliation:

1. Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan

2. Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan

3. Precursory Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency (JST), Tokyo 102-0076, Japan

4. Center for Science and Innovation in Spintronics, Tohoku University, Sendai 980-8577, Japan

5. International Center for Synchrotron Radiation Innovation Smart (SRIS), Tohoku University, Sendai 980-8577, Japan

Funder

Core Research for Evolutional Science and Technology

Precursory Research for Embryonic Science and Technology

Japan Society for the Promotion of Science

Foundation for Promotion of Material Science and Technology of Japan

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

Reference31 articles.

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