Deuterium adsorption on (and desorption from) SiC(0 0 0 1)-(3 × 3), $(\sqrt{\sf 3} \times \sqrt {\sf 3})$R30°, $({\sf 6}\sqrt {\sf 3} \times {\sf 6}\sqrt{\sf 3})$R30° and quasi-free-standing graphene obtained by hydrogen intercalation-Reference-Cited by-同舟云学术

Deuterium adsorption on (and desorption from) SiC(0 0 0 1)-(3 × 3), $(\sqrt{\sf 3} \times \sqrt {\sf 3})$R30°, $({\sf 6}\sqrt {\sf 3} \times {\sf 6}\sqrt{\sf 3})$R30° and quasi-free-standing graphene obtained by hydrogen intercalation

Published:2014-02-12 Issue:9 Volume:47 Page:094014
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Bocquet F C,Bisson R^ORCID,Themlin J-M,Layet J-M,Angot T

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/47/i=9/a=094014/pdf

Reference60 articles.

1. Graphene: Status and Prospects

2. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

3. Interlayer Interaction and Electronic Screening in Multilayer Graphene Investigated with Angle-Resolved Photoemission Spectroscopy

4. Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

5. Epitaxial Graphene Transistors: Enhancing Performance via Hydrogen Intercalation

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