Room temperature epitaxial growth of TiN on SiC
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. A critical review of ohmic and rectifying contacts for silicon carbide
2. High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC
3. Advances in SiC power MOSFET technology
4. Stability of rhenium thin films on single crystal (001) β‐SiC
5. Thermal stability of Re Schottky contacts to 6H-SiC
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1. Epitaxial growth of TiN on (0001) semi-insulating 4H-SiC substrate by reactive sputtering;Surface and Coatings Technology;2022-05
2. Ohmic contact formation mechanisms of TiN film on 4H–SiC;Ceramics International;2020-04
3. Quantum interference effects in titanium nitride films at low temperatures;Thin Solid Films;2019-07
4. Copper adatom, admolecule transport, and island nucleation on TiN(0 0 1) via ab initio molecular dynamics;Applied Surface Science;2018-08
5. Room Temperature Growth of Epitaxial Titanium Nitride Films by Pulsed Laser Deposition;Crystal Growth & Design;2017-10-30
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