High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC-Reference-Cited by-同舟云学术

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High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC

Published:1998-02 Issue: Volume:264-268 Page:1077-1080
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Sheppard S.T.¹,Lauer V.²,Wondrak W.³,Niemann E.³

Affiliation:

1. Cree, Incorporation

2. INSA de Lyon - Domaine Scientifique de la Doua

3. DaimlerChrysler AG

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.264-268.1077.pdf

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 °C*;Chinese Physics B;2021-02-01

2. Wide-Bandgap Semiconductor Device Technologies for High-Temperature and Harsh Environment Applications;Harsh Environment Electronics;2019-03-29

3. 4H-SiC N-Channel JFET for Operation in High-Temperature Environments;IEEE Journal of the Electron Devices Society;2014-11

4. (Invited) Assessment of Durable SiC JFET Technology for +600° to -125° Integrated Circuit Operation;ECS Transactions;2011-10-04

5. 6H-SiC JFETs for 450 $^{\circ}\hbox{C}$ Differential Sensing Applications;Journal of Microelectromechanical Systems;2009-08

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