4H-SiC N-Channel JFET for Operation in High-Temperature Environments-Reference-Cited by-同舟云学术

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4H-SiC N-Channel JFET for Operation in High-Temperature Environments

Published:2014-11 Issue:6 Volume:2 Page:164-167
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Lien Wei-Chen,Damrongplasit Nattapol,Paredes John H.,Senesky Debbie G.,Liu Tsu-Jae K.,Pisano Albert P.

Funder

Siemens USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/6935048/06892931.pdf?arnumber=6892931

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 4H-SiC JFET with a monolithically integrated temperature sensor;Power Electronic Devices and Components;2024-08

2. Distribution of impurities in base-depleted region of diode temperature sensor;Low Temperature Physics;2024-05-01

3. Simulation of High-Temperature Performance and Electronic Noise of SiC-JFET for Charge-Sensitive Preamplifier;IEEE Transactions on Nuclear Science;2023-11

4. Analysis of Ruggedness of 4H-SiC Power MOSFETs with Various Doping Parameters;Applied Sciences;2022-12-29

5. Steady-state over-current safe operation area (SOA) of the SiC MOSFET at cryogenic and room temperatures;Cryogenics;2022-03

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