Characterization and optimization of a plasma doping process using a pulsed RF-excited B2H6 plasma system-Reference-Cited by-同舟云学术

Characterization and optimization of a plasma doping process using a pulsed RF-excited B2H6 plasma system

Published:2007-04 Issue:15 Volume:201 Page:6759-6767
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Qin Shu,McTeer Allen

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference18 articles.

1. Plasma immersion ion implantation—a fledgling technique for semiconductor processing

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5. 197th Meeting of The Electrochemical Society, Symposium II—Rapid Thermal and Other Short-Time Processing Technologies, Toronto, Canada, May 14–18;Agarwal,2000

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