Front-side and back-side secondary ion mass spectrometry analyses on advanced doping processes for ultra-large scale integrated circuit: A case study
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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5. CMOS device performance improvement by using flood buried-contact plasma doping (PLAD) processes;Qin;IEEE Trans. Electron Devices,2015
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1. Development of a Real-Time Boron Concentration Monitoring Technique for Plasma Doping Implantation;Crystals;2023-12-06
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