High quality low thermal budget low cost SiO2 film fabricated by O2 plasma immersion ion implantation-Reference-Cited by-同舟云学术

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High quality low thermal budget low cost SiO2 film fabricated by O2 plasma immersion ion implantation

Published:2022-08 Issue: Volume:756 Page:139385
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Qin Shu

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Electrical Characterization of Silicon-on-Insulator Materials and Devices;Cristoloveanu,1995

2. SOI CMOS front-end technology: Options and tradeoffs;Antoniadis,1995

3. Implications of thin buried-oxide for SIMOX circuit performance;Alles,1994

4. The Ibis 1000 SIMOX production implanter;Ryding,1996

5. Separation of plasma implantation of oxygen to form silicon on insulator;Lu;Appl. Phys. Lett.,1997

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review of Recombination Coefficients of Neutral Oxygen Atoms for Various Materials;Materials;2023-02-21

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