Controlling the beam angle spread of carbon implantation for improvement of bin map defect in V-NAND flash memory-Reference-Cited by-同舟云学术

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Controlling the beam angle spread of carbon implantation for improvement of bin map defect in V-NAND flash memory

Published:2023-07 Issue: Volume:4 Page:100027
ISSN:2773-0646
Container-title:Memories - Materials, Devices, Circuits and Systems
language:en
Short-container-title:Memories - Materials, Devices, Circuits and Systems

Author:

Yang Gui-Fu^ORCID,Jang Sung-Hwan,JANG SUNG-UK,Lee Tae-Hyun,Kim Da-Hye,Huh Jung-Ho,Yoo Seok-Hyun

Publisher

Elsevier BV

Reference31 articles.

1. High performance accelerators for deep neural networks: A review

2. C.B. Wu, C.S. Wang, Y.K. Hsiao, Reconfigurable Hardware Architecture Design and Implementation for AI Deep Learning Accelerator, in: IEEE 9th Global Conference on Consumer Electronics (GCCE) Kobe, Japan, 2020, pp. 154–155.

3. NAND flash memory and its place in IoT;Bennett,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modification in electrical conductivity correlated with surface, structural & optical characteristics of graphite ions implanted CR-39;Heliyon;2024-07

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