a-SiC:H low-k deposition as copper diffusion barrier layer in advanced microelectronic interconnections
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference11 articles.
1. New solutions for intermetal dielectrics using trimethylsilane-based PECVD processes
2. B. Rémiat, Doctoral Thesis, Montpellier University II, 2003.
3. Introduction to Infrared and Raman Spectroscopy Chap. 8;Colthup,1990
4. Preparation of device-quality SiO2 thin films by remote plasma-enhanced chemical vapour deposition (PECVD): Applications in metal-oxide-semiconductor (MOS) devices
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