1. Safe precursor gas for broad replacement of SiH4 in plasma processes employed in integrated circuit production;Loboda,1997
2. Using trimethylsilane to improve safety, throughput and versatility in PECVD processes;Loboda,1997
3. M.J. Loboda, J.A. Seifferly, R.F. Schneider, C.M. Grove, Deposition of low-k dielectric films using trimethylsilane: presented at the 194th Meeting of the Electrochemical Society, Boston, MA, November 1998
4. P. Xu, K. Huang, A. Patel, S. Rathi, B. Tang, J. Ferguson, J. Huang, C. Ngai, M. Loboda, to be published at the 1999 IEEE Intl Interconnection Technology Conference, San Francisco, California
5. Dielectric barriers for Cu metallization systems;Vogt;Microelect. Eng.,1997