Funder
National Research Foundation of Korea (NRF)
Korea Institute of Energy Technology Evaluation and Planning
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference41 articles.
1. Transient and thermal analysis on disturbance immunity for 4F2 surrounding gate 1T-DRAM with wide trenched body;Lin;IEEE Trans. Electron Devices,2015
2. Sidewall transfer process and selective gate sidewall spacer formation technology for sub-15nm finfet with elevated source/drain extension;Kaneko,2005
3. Evaluation of low temperature silicon nitride spacer for high-k metal gate integration;Triyoso;ECS J. Solid State Sci. Technol.,2013
4. Challenges in spacer process development for leading-edge high-k metal gate technology;Koehler;Phys. Status Solidi C,2014
5. Atomic Layer Deposition of SiN for spacer applications in high-end logic devices;Koehler;Mater. Sci. Eng.,2012
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献