Room temperature process for chemical vapor deposition of amorphous silicon carbide thin film using monomethylsilane gas
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
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1. Silicon Epitaxy;Rinaldi,2001
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3. Low temperature amorphous silicon carbide thin film formation process on aluminum surface using monomethylsilane gas and trichlorosilane gas;Journal of Crystal Growth;2014-09
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5. Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas;Materials Science Forum;2013-01
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