High growth rates (>30μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
2. Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD
3. Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
4. Growth of SiC by ?Hot-Wall? CVD and HTCVD
5. High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
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