Kinetics and crystal texture improvements on thin germanium layers obtained by aluminium induced crystallization using oxygen plasma
Author:
Funder
Institut Photovoltaique d'Ile de France
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference23 articles.
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3. 40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells;King;Appl. Phys. Lett.,2007
4. High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization;Takeuchi;Appl. Phys. Lett.,2015
5. Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain;Sadoh;Appl. Phys. Lett.,2006
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low Energy Ion-Induced Crystallization of Ge in c-Al/a-Ge Bilayer Thin Films at Low Temperatures of ∼125 °C;Crystal Growth & Design;2023-12-04
2. Crystallization of Ge in ion-irradiated amorphous-Ge/Au thin films;CrystEngComm;2020
3. Microstructure of GaAs thin films grown on glass using Ge seed layers fabricated by aluminium induced crystallization;Thin Solid Films;2020-01
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