Adsorption behavior of anionic polyelectrolyte for chemical mechanical polishing (CMP)-Reference-Cited by-同舟云学术

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Adsorption behavior of anionic polyelectrolyte for chemical mechanical polishing (CMP)

Published:2008-03 Issue:1 Volume:319 Page:48-52
ISSN:0021-9797
Container-title:Journal of Colloid and Interface Science
language:en
Short-container-title:Journal of Colloid and Interface Science

Author:

Kim Sarah,So Jae-Hyun,Lee Dong-Jun,Yang Seung-Man

Publisher

Elsevier BV

Subject

Colloid and Surface Chemistry,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Advances in Chemical-Mechanical Planarization

2. Nanotopography Issues in Shallow Trench Isolation CMP

3. Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal–oxide–semiconductor fabrication

4. Wear‐Contact Problems and Modeling of Chemical Mechanical Polishing

5. Role of Amino-Acid Adsorption on Silica and Silicon Nitride Surfaces during STI CMP

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1. Evaluation of chemical mechanical polishing characteristics using mixed abrasive slurry: A study on polishing behavior and material removal mechanism;Applied Surface Science;2025-01

2. Development of Highly stable ceria slurry in acetic acid-ammonium acetate buffer Media for effective chemical mechanical polishing of silicon dioxide;Materials Science in Semiconductor Processing;2024-07

3. Enhancing ceria slurry performance for shallow trench isolation chemical mechanical polishing through non-ionic surfactant addition;The International Journal of Advanced Manufacturing Technology;2023-09-05

4. Innovative insight for sodium hexametaphosphate on the dispersion of micro-sized lanthanum-cerium-based slurry;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2023-07

5. Synthesis of CeO2 Nanoparticles Derived by Urea Condensation for Chemical Mechanical Polishing;Electronic Materials Letters;2023-04-10

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