Enhancing ceria slurry performance for shallow trench isolation chemical mechanical polishing through non-ionic surfactant addition
Author:
Publisher
Springer Science and Business Media LLC
Subject
Industrial and Manufacturing Engineering,Computer Science Applications,Mechanical Engineering,Software,Control and Systems Engineering
Link
https://link.springer.com/content/pdf/10.1007/s00170-023-12254-8.pdf
Reference14 articles.
1. Kang HG, Park HS, Paik U et al (2011) Effects of abrasive particle size and molecular weight of poly(acrylic acid) in ceria slurry on removal selectivity of SiO2/Si3N4 films in shallow trench isolation chemical mechanical planarization. J Mater Res 22(3):777–787
2. Kwak D, Oh S, Kim J et al (2021) Study on the effect of ceria concentration on the silicon oxide removal rate in chemical mechanical planarization. Colloids Surf, A 610:125670
3. Myong KK, Byun J, Choo MJ et al (2021) Direct and quantitative study of ceria-SiO2 interaction depending on Ce3+ concentration for chemical mechanical planarization (CMP) cleaning. Mater Sci Semicond Process 122:105500
4. Linhart AN, Wortman-Otto KM, Keleher JJ (2021) Evaluation of a photosensitizer redox couple for oxide removal rate tunability in shallow trench isolation chemical mechanical planarization. ECS J Solid State Sci Technol 10(6):063001
5. Janos P, Ederer J, Pilarova V et al (2016) Chemical mechanical glass polishing with cerium oxide: effect of selected physico-chemical characteristics on polishing efficiency. Wear 362(363):114–120
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