Study on the effect of ceria concentration on the silicon oxide removal rate in chemical mechanical planarization

Author:

Kwak Donggeon,Oh Seungjun,Kim Juhwan,Yun Junho,Kim Taesung

Funder

MOTIE

KSRC

Publisher

Elsevier BV

Subject

Colloid and Surface Chemistry

Reference20 articles.

1. Microelectronic Applications of Chemical Mechanical Planarization;Li,2007

2. Shallow trench isolation chemical mechanical planarization: a review;Srinivasan;ECS J. Solid State Sci. Technol.,2015

3. Slurry additive effects on the suppression of silicon nitride removal during CMP;America;Electrochem. Solid-state Lett.,2004

4. Role of different additives on silicon dioxide film removal rate during chemical mechanical polishing using ceria-based dispersions;Dandu;J. Electrochem. Soc.,2010

5. Silicon nitride film removal during chemical mechanical polishing using ceria-based dispersions;Veera Dandu;J. Electrochem. Soc.,2011

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