Study on the effect of ceria concentration on the silicon oxide removal rate in chemical mechanical planarization
Author:
Funder
MOTIE
KSRC
Publisher
Elsevier BV
Subject
Colloid and Surface Chemistry
Reference20 articles.
1. Microelectronic Applications of Chemical Mechanical Planarization;Li,2007
2. Shallow trench isolation chemical mechanical planarization: a review;Srinivasan;ECS J. Solid State Sci. Technol.,2015
3. Slurry additive effects on the suppression of silicon nitride removal during CMP;America;Electrochem. Solid-state Lett.,2004
4. Role of different additives on silicon dioxide film removal rate during chemical mechanical polishing using ceria-based dispersions;Dandu;J. Electrochem. Soc.,2010
5. Silicon nitride film removal during chemical mechanical polishing using ceria-based dispersions;Veera Dandu;J. Electrochem. Soc.,2011
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