MOCVD growth and characterization of conductive homoepitaxial Si-doped Ga2O3-Reference-Cited by-同舟云学术

MOCVD growth and characterization of conductive homoepitaxial Si-doped Ga2O3

Published:2021-06 Issue: Volume:25 Page:104167
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Hernandez Armando,Islam Md Minhazul,Saddatkia Pooneh,Codding Charles,Dulal Prabin,Agarwal Sahil,Janover Adam,Novak Steven,Huang Mengbing,Dang Tuoc,Snure Mike,Selim F.A.

Funder

NSF DMR

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference46 articles.

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2. Point and extended defects in heteroepitaxial β− G a 2 O 3 films;Saadatkia;Phys Rev Mater,2020

3. Influence of growth temperature on the characteristics of β-Ga2O3 epitaxial films and related solar-blind photodetectors;Wang;Appl Surf Sci,2019

4. Ultra-wide-bandgap (ScGa) 2O3 alloy thin films and related sensitive and fast responding solar-blind photodetectors;Wang;J Alloy Compd,2020

5. Localized UV emitters on the surface of β-Ga2O3;Huso;Sci Rep,2020

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1. Enhanced electrical properties of pulsed Sn-doped (-201) β-Ga2O3 thin films via MOCVD homoepitaxy;Surfaces and Interfaces;2024-10

2. High-Efficiency Doping Outcomes in Homoepitaxial β-Ga₂O₃ Films via Pulsed Si Doping with MOCVD;Crystal Growth & Design;2024-09-13

3. High Electron Mobility in Si-Doped Two-Dimensional β-Ga2O3 Tuned Using Biaxial Strain;Materials;2024-08-12

4. Strain mediated ultra-high electron mobility in Ge-doped two-dimensional Ga2O3;AIP Advances;2024-08-01

5. Ultra-high electron mobility in Sn-doped two-dimensional Ga₂O₃ modified by biaxial strain and electric field;Applied Physics Express;2024-08-01