Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study

Author:

Karbalaei Mohammad,Dideban Daryoosh,Heidari Hadi

Funder

EPSRC IAA

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference68 articles.

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2. Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs);Choi;Nano Convergence,2016

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4. CMOS VLSI design: a circuits and systems perspective;Weste,2011

5. A new architecture of the dual gate transistor for the analog and digital applications;Zareiee;AEU-Int J Electron Commun,2019

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