A new architecture of the dual gate transistor for the analog and digital applications-Reference-Cited by-同舟云学术

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A new architecture of the dual gate transistor for the analog and digital applications

Published:2019-02 Issue: Volume:100 Page:114-118
ISSN:1434-8411
Container-title:AEU - International Journal of Electronics and Communications
language:en
Short-container-title:AEU - International Journal of Electronics and Communications

Author:

Zareiee Meysam

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference19 articles.

1. Silicon-On-Insulator Technology: Materials to VLSI;Colinge,2004

2. Scaling the Si MOSFET: from bulk to SOI to bulk;Yan;IEEE Trans Electron Dev,1992

3. Optically-switched wide-bandgap power semiconductor devices and device-transition control;Mazumder;Phys Semicond Dev,2014

4. Complex permittivity of semiconductor device under DC bias;Li;AEU - Int J Electron Commun,2016

5. SOI design: analog, memory and digital techniques;Marshal,2003

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1. Design of Low Power Analog/RF Signal Processing Circuits Using 22 nm Silicon-on-Insulator Schottky Barrier Nano-Wire MOSFET;International Journal of High Speed Electronics and Systems;2024-01-23

2. High performance nanoscale SOI MOSFET with enhanced gate control;Micro and Nanostructures;2023-03

3. Impact of high-k metal oxide as gate dielectric on the certain electrical properties of silicon nanowire field-effect transistors: A simulation study;Facta universitatis - series: Electronics and Energetics;2023

4. Π-Shape Silicon Window for Controlling OFF-Current in Junctionless SOI MOSFET;Silicon;2021-10-29

5. A Novel Nanoscale SOI MOSFET by Using a P-N Junction and an Electrically Hole Free Region to Improve the Electrical Characteristics;Silicon;2021-09-12

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